Theoretical model analysis of changes in PL spectrum temperature in InGaN quantum wells

Abstract

It is known that, in an InGaN quantum well, the PL spectrum and its temperature dependence exhibit unique characteristics, such as the temperature dependence of the PL peak forming an S-shaped curve, as an enormous spatial fluctuation in the In composition occurs. In this study, we measured changes in temperature dependent PL spectrum of InGaN quantum well samples with different In compositions in an attempt to build a theoretical model that explains the obtained results. We fitted this model to the changes in temperature dependent PL spectrum, as a result of which we succeeded in fitting it over the whole temperature range and obtained reasonable parameter values.

Japan Society of Applied Physics, the 82nd JSAP Autumn Meeting